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STPS340B-TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS340B-TR
ST-Microelectronics
STMicroelectronics 
STPS340B-TR Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
STPS340
Figure 7.
IM(A)
25
20
Non repetitive surge peak forward Figure 8.
current versus overload duration
(maximum values) SMB flat
Normalized avalanche power
derating versus pulse duration
SMB flat
PARM(tp)
PARM(1µs)
1
15
10
5
IM
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TL=25°C
TL=75°C
TL=125°C
0.1
0.01
0.001
1.E+00
0.01
0.1
tp(µs)
1
10
100
1000
Figure 9.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
Tj(°C)
75
100
125
150
Figure 10. Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
Zth(j-a)/Rth(j-a)
1.0
0.9
DPAK
0.8
0.7
0.6
0.5
0.4
0.3 Single pulse
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
Figure 11. Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMB)
Zth(j-a)/Rth(j-a)
1.0
0.9
SMB
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Figure 12. Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMC)
Zth(j-a)/Rth(j-a)
1.0
0.9
SMC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
4/11

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