STPS20L60CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20L60CR Datasheet PDF : 10 Pages
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STPS20L60C
Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Average current versus ambient
temperature (= 0.5) (per diode)
PF(av)(W)
8
7
δ = 0.05
6
5
δ = 0.1
δ = 0.2
IF(av)(A)
12
δ = 0.5
δ= 1
10
8
Rth(j-a)=Rth(j-c)
4
6
Rth(j-a)=15°C/W
3
2
T
4
T
2
1
IF(av) (A)
δ=tp/T
tp
δ=tp/T
tp
Tamb(°C)
0
0
1
2
3
4
5
6
7
8
0
9 10 11 12 0
25
50
75
100
125
150
Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating
versus pulse duration
versus junction temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5. Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
Figure 6. Relative variation of thermal transient
impedance junction to case versus pulse
duration
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Zth(j-c)/Rth(j-c)
1.0
0.8
Tc=25°C
Tc=75°C
Tc=100°C
1E+0
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
DocID6427 Rev 4
3/10
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