STPS10H100CT View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS10H100CT

High voltage power Schottky rectifier

STMicroelectronics 

®

STPS10H100CT/CG/CR/CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

IF(AV)

VRRM

Tj

VF (max)

2x5A

100 V

175°C

0.61 V

A1

A2

K

K

K

FEATURES AND BENEFITS

s HIGH JUNCTION TEMPERATURE CAPABILITY

FOR CONVERTERS LOCATED IN CONFINED

ENVIRONMENT

s LOW LEAKAGE CURRENT AT HIGH

TEMPERATURE

s LOW STATIC AND DYNAMIC LOSSES AS A

RESULT OF THE SCHOTTKY BARRIER

s AVALANCHE CAPABILITY SPECIFIED

A2

A1

D2PAK

STPS10H100CG

A2

K

A1

I2PAK

STPS10H100CR

DESCRIPTION

Schottky barrier rectifier designed for high

frequency miniature Switched Mode Power

Supplies such as adaptators and on board

DC/DC converters. Packaged in TO-220AB,

TO-220FPAB, D2PAK and I2PAK.

A2

K

A1

TO-220AB

STPS10H100CT

A2

K

A1

TO-220FPAB

STPS10H100CFP

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

VRRM Repetitive peak reverse voltage

100

IF(RMS) RMS forward current

10

IF(AV) Average forward

TO-220AB

Tc = 165°C per diode

5

current δ = 0.5

D2PAK / I2PAK

per device

10

TO-220FPAB

Tc = 160°C

IFSM Surge non repetitive forward current

tp = 10 ms sinusoidal

180

IRRM Repetitive peak reverse current

tp = 2 µs square F = 1kHz

1

PARM Repetitive peak avalanche power

tp = 1µs Tj = 25°C

7200

Tstg Storage temperature range

- 65 to + 175

Tj Maximum operating junction temperature *

175

dV/dt Critical rate of rise of reverse voltage

10000

* : dPtot <

1

thermal runaway condition for a diode on its own heatsink

dTj

Rth( j − a)

July 2003 - Ed: 3F

Unit

V

A

A

A

A

W

°C

°C

V/µs

1/7

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