STPS16H100CG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS16H100CG Datasheet PDF : 10 Pages
| |||
Characteristics
STPS16H100C
1
Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFSM
PARM
Tstg
Tj
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5,
square wave
TC = 165 °C
TC = 160 °C
Per diode
Per device
Surge non repetitive forward
current
tp = 10 ms sinusoidal
Repetitive peak avalanche power tp = 10 µs, Tj= 125 °C
Storage temperature range
Maximum operating junction temperature (1)
100
V
30
A
8
A
16
200
A
625
W
-65 to + 175 °C
+ 175
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Rth(c)
Table 3: Thermal parameter
Parameter
Junction to case
Per diode
Total
Coupling
Value
1.6
1.1
0.6
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4: Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
VF(2)
Reverse leakage current
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 8 A
IF = 16 A
-
3.6 µA
-
1.6
5
mA
-
0.77
- 0.59 0.64
V
-
0.88
- 0.67 0.73
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.55 x IF(AV) + 0.011 IF2(RMS)
2/10
DocID8734 Rev 3
Share Link: 