STPS41L60CT View Datasheet(PDF) - STMicroelectronics
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STPS41L60CT Datasheet PDF : 12 Pages
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Document CD00002861 Revision 6.1
Characteristics
1
Characteristics
IN APPROVAL
5 / 12
STPS41L60C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
TC = 125 °C
δ = 0.5
Per diode
Per device
60
V
30
A
20
A
40
IFSM Surge non repetitive forward current
tp = 10 ms Sinusoidal
220
A
PARM(1) Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
9500
W
VARM (2) Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 35 A
80
V
VASM (2) Maximum single pulse peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 35 A
80
V
Tstg Storage temperature range
Tj Maximum operating junction temperature(3)
-65 to + 175 °C
150
°C
1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12
3.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
Unit
Rth (j-c)
Rth (c)
Junction to case
Coupling
Per diode
1.5
Total
0.8
° C/W
0.1
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
600
µA
100 175
mA
Tj = 25 °C
IF = 20 A
0.60
VF (1) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
IF = 20 A
IF = 40A
0.50 0.58
V
0.77
Tj = 125 °C
IF = 40A
0.67 0.71
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.007 x IF2(RMS)
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Doc ID 8616 Rev 6
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