STPS3060CW View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS3060CW

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS3060CW

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

IM(A)

160

140

120

100

80

TC=50°C

60

40

IM

20

0

1.E-03

t

δ=0.5

1.E-02

t(s)

1.E-01

TC=75°C

TC=110°C

1.E+00

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4 δ = 0.2

0.3 δ = 0.1

0.2

Single pulse

0.1

0.0

1.E-03

1.E-02

tp(s)

T

δ=tp/T

1.E-01

tp

1.E+00

Fig. 5: Reverse leakage currrent versus reverse

voltage applied (typical values, per diode).

IR(mA)

1.E+01

Tj=125°C

1.E+00

Tj=100°C

1.E-01

1.E-02

Tj=75°C

Tj=50°C

1.E-03

5

VR(V)

10 15 20 25 30 35 40 45 50 55 60

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

C(pF)

10000

F=1MHz

VOSC=30mVRMS

Tj=25°C

1000

VR(V)

100

1

10

100

Fig. 7: Forward voltage drop versus forward

current (maximum values, per diode).

IFM(A)

1000

Tj=125°C

100

10

VFM(V)

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

3/4

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