STPS5L60RL View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS5L60RL Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
STPS5L60
Table 2. Absolute Ratings (limiting values, at 25 °C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
Repetitive peak reverse voltage
Forward RMS current
DO-201AD
IF(AV) Average forward current
SMC
SMB
IFSM
Surge non repetitive forward current, half
sine wave, tp = 10 ms
TL = 100°C, δ = 0.5
TL = 100°C, δ = 0.5
TL = 80°C, δ = 0.5
DO-201AD, SMC
SMB
60
V
15
A
5
A
150
A
90
PARM Repetitive peak avalanche power
tp = 10 µs Tj = 125 °C
280
W
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
1. dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink
dTj Rth(j-a)
-65 to +175 °C
150
°C
Symbol
Rth(j-a)
Rth(j-l)
Table 3. Thermal resistance
Parameter
Junction to
ambient
DO-201AD
DO-201AD Lead length = 10 mm
Junction to lead SMC
SMB
Value
75
15
15
20
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Tj = 25 °C
-
IR(1)
Reverse leakage current Tj = 100 °C
Tj = 110 °C
VR = VRRM
-
-
Tj = 125 °C
-
Tj = 25 °C
-
VF(1) Forward voltage drop
Tj = 100 °C IF = 5A
-
Tj = 125 °C
-
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.39 x IF(AV) + 0.028 IF2(RMS)
0.22
10
25
mA
25
55
40
100
0.47 0.52
0.43 0.49
V
0.42 0.48
2/12
Doc ID8727 Rev 4
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