2N7002CSM
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC CHARACTERISTICS
V(BR)DSS Gate – Source Breakdown Voltage
VGS = 0V
ID = 10µA
60
VGS(th) Gate Threshold Voltage
VDS = VGS ID = 0.25mA
1
IGSS
Gate – Body Leakage Current
VGS = ±20VVDS = 0V
IDSS
ID(on)*
Zero Gate Voltage Drain Current
On–State Drain Current
VDS = 60V VGS = 0V
TCASE = 125°C
VDS≥2VDS(ON) VGS = 10V
500
VGS = 5V
RDS(on)* Drain – Source On Resistance
ID = 50mA
VGS = 10V
TCASE = 125°C
ID = 0.5A
TCASE = 125°C
VGS = 5V
ID = 50mA
VDS(on)* Drain – Source On Voltage
VGS = 10V
ID = 0.5A
TCASE = 125°C
gFS*
Forward Transconductance
VDS = 10V ID = 0.2A
80
gOS*
Common Source Output Conductance VDS = 5V
ID = 50mA
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS = 25V
VGS = 0V
f = 1MHz
tON
Turn–On Time
tOFF
Turn–Off Time
VDD = 30V
RL = 150Ω
ID = 0.2A
VGEN = 10V
RG = 25Ω
* Pulse Test: PW = 80 µs , δ ≤ 1%
Typ.
70
2.15
1000
5
9
2.5
4.4
0.25
1.25
2.2
170
500
16
11
2
7
7
Max. Unit
V
2.5
±100 nA
1
µA
500
mA
7.5
13.5
Ω
7.5
13.5
0.375
3.75 V
6.75
ms
µs
50
25
pF
5
20
ns
20
RθJA
Parameter
Thermal Resistance, Junction to Ambient
Min.
Typ.
Max. Unit
625 °C/W
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Website http://www.semelab.co.uk
Prelim. 7/98