BU931P(1999) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BU931P Datasheet PDF : 7 Pages
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BU931 / BU931P
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case Max
TO-3
1
T O-218
1.1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off
Current (VBE = 0)
VCE = 500 V
VCE = 500 V
Tj = 125 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO Emitt er Cut-off Current
(IC = 0)
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
VCE = 450 V
VCE = 450 V
VEB = 5 V
Tj = 125 oC
IC = 100 mA L = 10 mH
VClamp = 400 V
(See Fig.4)
IC = 7 A
IC = 8 A
IC = 10 A
IB = 70 mA
IB = 100 mA
IB = 250 mA
VBE(s at)∗
hFE∗
VF
Ba se-Em it t er
Saturation Voltage
IC = 7 A
IC = 8 A
IC = 10 A
DC Current G ain
IC = 5 A
Diode Forward Voltage IF = 10 A
IB = 70 mA
IB = 100 mA
IB = 250 mA
VCE = 10 V
Functional Test
(see fig. 1)
VCC = 24 V
L = 7 mH
Vcl amp = 400 V
INDUCTIVE LOAD
VCC = 12 V
ts
Storage Time
L = 7 mH
tf
Fall Time
IC = 7 A
(see fig. 3)
VBE = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Vcl amp = 300 V
IB = 70 mA
RBE = 47 Ω
Min. Typ.
400
300
8
15
0.5
M a x.
100
0.5
100
0.5
20
1.6
1.8
1.8
2.2
2.4
2.5
2.5
Unit
µA
mA
µA
mA
mA
V
V
V
V
V
V
V
V
A
µs
µs
Safe Operating Area
DC Current Gain
2/7
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