GS816272C-200(2005) View Datasheet(PDF) - Giga Semiconductor

Part Name

Description

Manufacturer

GS816272C-200
(Rev.:2005)

256K x 72 18Mb Sync Burst SRAMs

Giga Semiconductor

GS816272C-200 Datasheet PDF : 31 Pages

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DC Electrical Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZZ Input Current

FT, SCD, ZQ Input Current

Output Leakage Current

Output High Voltage

Output Low Voltage

Symbol

IIL

IIN1

IIN2

IOL

VOH2

VOH3

VOL

GS816272C

Test Conditions

VIN = 0 to VDD

VDD ≥ VIN ≥ VIH

0 V ≤ VIN ≤ VIH

VDD ≥ VIN ≥ VIL

0 V ≤ VIN ≤ VIL

Output Disable, VOUT = 0 to VDD

IOH = –8 mA, VDDQ = 2.375 V

IOH = –8 mA, VDDQ = 3.135 V

IOL = 8 mA

Min

–1 uA

–100 uA

–1 uA

1.7 V

2.4 V

—

Max

1 uA

100 uA

1 uA

—

0.4 V

Rev: 2.18 11/2005

12/31

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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