LH28F160S5T-L80 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F160S5T-L80

16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

Sharp Electronics 

LH28F160S5-L/S5H-L

6.2.8 BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE AND

BLOCK LOCK-BIT CONFIGURATION PERFORMANCE (NOTE 3, 4)

• VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70°C or –40 to +85°C

SYMBOL

PARAMETER

tWHQV1

tEHQV1

tWHQV1

tEHQV1

Word/Byte Write Time (using W/B write, in word mode)

Word/Byte Write Time (using W/B write, in byte mode)

NOTE

2

2

VCC = 5.0±0.5 V

MIN. TYP. (NOTE 1) MAX. UNIT

9.24

TBD µs

9.24

TBD µs

Word/Byte Write Time (using multi word/byte write)

2

Block Write Time (using W/B write, in word mode)

2

Block Write Time (using W/B write, in byte mode)

2

Block Write Time (using multi word/byte write)

2

tWHQV2

tEHQV2 Block Erase Time

2

2

TBD µs

0.31

3.7

s

0.61

7.5

s

0.13

1.5

s

0.34

10

s

tWHQV3

tEHQV3

tWHQV4

tEHQV4

tWHRH1

tEHRH1

tWHRH2

tEHRH2

Full Chip Erase Time

Set Block Lock-Bit Time

Clear Block Lock-Bits Time

Write Suspend Latency Time to Read

Erase Suspend Latency Time to Read

10.9

TBD

s

2

9.24

TBD µs

2

0.34

TBD

s

5.6

7

µs

9.4

13.1 µs

NOTES :

1. Typical values measured at TA = +25°C and nominal

voltages. Assumes corresponding block lock-bits are not

set. Subject to change based on device characterization.

2. Excludes system-level overhead.

3. These performance numbers are valid for all speed

versions.

4. Sampled, not 100% tested.

- 50 -

Share Link: