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OR2T04A-4T100I View Datasheet(PDF) - Lattice Semiconductor

Part Name
Description
Manufacturer
OR2T04A-4T100I
Lattice
Lattice Semiconductor 
OR2T04A-4T100I Datasheet PDF : 192 Pages
First Prev 131 132 133 134 135 136 137 138 139 140 Next Last
Data Sheet
January 2002
ORCA Series 2 FPGAs
Electrical Characteristics (continued)
Table 31B. OR2TxxB Electrical Characteristics
OR2TxxB Commercial: VDD = 3.0 V to 3.6 V, 0 °C ≤ TA ≤ 70 °C; OR2TxxB Industrial: VDD = 3.0 V to 3.6 V, –40 °C ≤ TA ≤ +85 °C.
Parameter
Input Voltage:
High
Low
Output Voltage:
High
Low
Input Leakage Current
Standby Current:
OR2T15B
OR2T40B
Symbol
VIH
VIL
VOH
VOL
IL
IDDSB
Test Conditions
Input conï¬gured as CMOS
VDD = min, IOH = 6 mA or 3 mA
VDD = min, IOL = 12 mA or 6 mA
VDD = max, VIN = VSS or VDD
OR2TxxB (TA = 25 °C, VDD = 3.3 V)
internal oscillator running,
no output loads,
inputs at VDD or GND
(after conï¬guration)
OR2TxxB
Min
Max
80% VDD
GND – 0.5
VDD + 0.3
15% VDD
Unit
V
V
2.4
—
V
—
0.4
V
–10
10
µA
—
5.5
mA
—
8.0
mA
Standby Current:
OR2T15B
OR2T40B
IDDSB
OR2TxxB (TA = 25 °C, VDD = 3.3 V)
internal oscillator stopped,
—
2.0
mA
no output loads,
—
4.5
mA
inputs at VDD or GND
(after conï¬guration)
Data Retention Voltage
Input Capacitance
Output Capacitance
DONE Pull-up Resistor*
M3, M2, M1, and M0
Pull-up Resistors*
I/O Pad Static Pull-up
Current*
I/O Pad Static Pull-down Cur-
rent
I/O Pad Pull-up Resistor*
I/O Pad Pull-down
Resistor
VDR
CIN
COUT
RDONE
RM
IPU
IPD
RPU
RPD
TA = 25 °C
OR2TxxB (TA = 25 °C, VDD = 3.3 V)
Test frequency = 1 MHz
OR2TxxB (TA = 25 °C, VDD = 3.3 V)
Test frequency = 1 MHz
—
—
VDD = 3.6 V, VIN = VSS, TA = 0 °C
VDD = 3.6 V, VIN = VDD, TA = 0 °C
VDD = all, VIN = VSS, TA = 0 °C
VDD = all, VIN = VDD, TA = 0 °C
* On the OR2TxxB devices, the pull-up resistor will externally pull the pin to a level 1.0 V below VDD.
2.3
—
—
100k
100k
14.4
26
100k
50k
—
V
8
pF
8
pF
—
Ω
—
Ω
50.9
µA
103
µA
—
Ω
—
Ω
Lattice Semiconductor
131

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