SST25VF080B-80-4C-QAE View Datasheet(PDF) - Silicon Storage Technology
Part Name
Description
Manufacturer
SST25VF080B-80-4C-QAE Datasheet PDF : 36 Pages
| |||
A Microchip Technology Company
8 Mbit SPI Serial Flash
SST25VF080B
Electrical Specifications
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Table 8: Operating Range
Range
Commercial
Industrial
Table 9: AC Conditions of Test1
Input Rise/Fall Time
5ns
1. See Figures 26 and 27
Ambient Temp
0°C to +70°C
-40°C to +85°C
VDD
2.7-3.6V
2.7-3.6V
T8.1 1296
Output Load
CL = 30 pF
T9.1 1296
Table 10:DC Operating Characteristics (SST25VF080B-50-xx-xxxx)
Symbol Parameter
IDDR
Read Current
IDDR2 Read Current
IDDW Program and Erase Current
ISB
Standby Current
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOL2 Output Low Voltage
VOH
Output High Voltage
Limits
Min Max Units Test Conditions
10
15
30
20
1
1
0.8
0.7 VDD
0.2
0.4
VDD-0.2
mA CE#=0.1 VDD/0.9 VDD@25 MHz, SO=open
mA CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open
mA CE#=VDD
µA CE#=VDD, VIN=VDD or VSS
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V VDD=VDD Min
V VDD=VDD Max
V IOL=100 µA, VDD=VDD Min
V IOL=1.6 mA, VDD=VDD Min
V IOH=-100 µA, VDD=VDD Min
T10.0 1296
©2011 Silicon Storage Technology, Inc.
23
S71296-05-000
02/11
Share Link: 