ST183C08CCM2LP View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
ST183C08CCM2LP Datasheet PDF : 10 Pages
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ST183CPbF Series
Inverter Grade Thyristors Vishay High Power Products
(Hockey PUK Version), 370 A
10 000
1000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
400 200 100
1000 500
1500
2500
3000
5000
100
10 000
10
10
ST183C..C Series
Trapezoidal pulse
tp
TC = 40 °C
dI/dt = 100 A/µs
100
1000
10 000
10 000
1000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
1000 500 400 200 100
1500
2500
3000
100
5000
10 000
10
10
ST183C..C Series
Trapezoidal pulse
tp
TC = 55 °C
dI/dt = 100 A/µs
100
1000
10 000
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
Pulse Basewidth (µs)
100 000
10 000
1000
20 joules per pulse
2
1
0.5
0.3
0.2
0.1
10
4
100
ST183C..C Series
Sinusoidal pulse
tp
10
10
100
1000
10 000
100 000
10 000
1000
100
ST183C..C Series
Rectangular pulse
tp dI/dt = 50 A/µs
2
1
0.3 0.5
0.2
0.1
20 joules per pulse
10
4
10
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
10
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST183C..C Series
Frequency limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94368
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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