STP200NF03 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP200NF03

N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET™ III Power MOSFET

STMicroelectronics 

STP200NF03 - STB200NF03 - STB200NF03-1

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 120A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 120A,

di/dt = 100A/µs,

VDD = 25V, Tj = 150°C

(see Figure 21)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

120 A

480 A

1.3 V

70

ns

170

nC

5

A

5/18

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