STP2NK100Z View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP2NK100Z

N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD2NK100Z, STP2NK100Z, STU2NK100Z

Electrical ratings

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage

VGS

Gate-source voltage

ID

Drain current (continuous) at TC = 25 °C

ID

Drain current (continuous) at TC = 100 °C

IDM (1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

ESD

Gate-source human body model (C = 100 pF, R =1.5 kΩ)

dv/dt (2) Peak diode recovery voltage slope

Tj

Operating junction temperature range

Tstg

Storage temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 1.85 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS.

Value

1000

±30

1.85

1.16

7.4

70

3

2.5

-55 to 150

Unit

V

V

A

A

A

W

kV

V/ns

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case

Rthj-pcb (1) Thermal resistance junction-pcb

Rthj-amb Thermal resistance junction-ambient

1. When mounted on FR-4 board of 1 inch², 2 oz Cu.

Value

DPAK TO-220 IPAK

1.79

50

-

-

62.5 100

Unit

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

IAR (1)

Avalanche current, repetitive or not-repetitive

EAS (2).

Single pulse avalanche energy

1. Pulse width limited by Tjmax.

2. Starting Tj = 25°C, ID = IAR, VDD = 50 V

Value

Unit

1.85

A

170

mJ

DS5280 - Rev 3

page 2/23

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