STPS20100CT
Fig. 3 : Non repetitive surge peak forward current
versus overload duration.
(Maximum values) (Per diode)
180 IM(A)
160
140
120
100
80
60
40 IM
20
0
0.001
t
=0.5
t(s)
0.01
0.1
Tc=25 oC
Tc=50 oC
Tc=110 oC
1
Fig. 4 : Relative variation of thermal transient
impedance junction to case versus pulse duration.
Fig. 5 : Reverse leakage current versus reverse
voltage applied. (Typical values) (Per diode)
IR(mA)
50.000
10.000
Tj=125o C
1.000
Tj=100o C
0.100
Tj=75 oC
0.010
Tj=50 oC
0.001
0
VR(V)
10 20 30 40 50 60 70 80 90 100
Fig. 6 : Junction capacitance versus reverse
voltage applied. (Typical values) (Per diode)
C(pF)
2000
1000
Tj=125o C
F=1MHz
100
1
VR(V)
10
100
Fig. 7 : Forward voltage drop versus forward
current. (Maximum values) (Per diode)
VFM(V)
1.4
1.2
Tj=125o C
1.0
0.8
0.6
0.4
0.2
I FM(A)
0.0
0.1
1
10
100
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