STPS41L30CT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS41L30CT Datasheet PDF : 6 Pages
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STPS41L30CG / STPS41L30CT / STPS41L30CR
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Rth(c) Coupling
Parameter
Per diode
Total
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Value
1.5
0.8
0.1
Unit
°C/W
Symbol
IR *
VF *
Parameter
Reverse leakage current
Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 20 A
Tj = 125°C
IF = 20 A
Tj = 25°C
IF = 40 A
Tj = 125°C
IF = 40 A
Min. Typ. Max. Unit
1.5 mA
170 350 mA
0.48
V
0.35 0.38
0.57
0.47 0.49
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.27 x IF(AV) + 0.0055 IF2(RMS)
Fig. 1: Conduction losses versus average current.
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
PF(av)(W)
11
10
9
δ = 0.1
8
δ = 0.05
7
6
δ = 0.2
δ = 0.5
δ=1
IF(av)(A)
25
20
15
Rth(j-a)=Rth(j-c)
5
10
4
Rth(j-a)=50°C/W
3
2
T
5
T
1
IF(av)(A)
δ=tp/T
tp
δ=tp/T
tp
Tamb(°C)
0
0
0
5
10
15
20
25
0
25
50
75
100
125
150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
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