VNH3ASP30-E(2004) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

VNH3ASP30-E
(Rev.:2004)

AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVER

STMicroelectronics 

VNH3ASP30-E

Table 16. Electrical Transient Requirements

ISO T/R

7637/1

Test Pulse

1

2

3a

3b

4

5

Test Level

I

-25V

+25V

-25V

+25V

-4V

+26.5V

Test Level

II

-50V

+50V

-50V

+50V

-5V

+46.5V

Test Level

III

-75V

+75V

-100V

+75V

-6V

+66.5V

Test Level

IV

-100V

+100V

-150V

+100V

-7V

+86.5V

Test Levels

Delays and Impedance

2ms, 10Ω

0.2ms, 10Ω

0.1µs, 50Ω

0.1µs, 50Ω

100ms, 0.01Ω

400ms, 2Ω

ISO T/R

7637/1

Test Pulse

1

2

3a

3b

4

5

Test Levels Result

I

C

C

C

C

C

C

Test Levels Result

II

C

C

C

C

C

E

Test Levels Result

III

C

C

C

C

C

E

Test Levels Result

IV

C

C

C

C

C

E

Class

C

E

Contents

All functions of the device are performed as designed after exposure to disturbance.

One or more functions of the device are not performed as designed after exposure to disturbance

and cannot be returned to proper operation without replacing the device.

Reverse Battery Protection

Three possible solutions can be thought of:

a) a Schottky diode D connected to VCC pin

b) a N-channel MOSFET connected to the GND

pin (see Typical Application Circuit on fig. 5)

c) a P-channel MOSFET connected to the VCC

pin.

The device sustains no more than -30A in reverse

battery conditions because of the two Body diodes

of the Power MOSFETs. Additionally, in reverse

battery condition the I/Os of VNH3ASP30 will be

pulled down to the VCC line (approximately -1.5V).

Series resistor must be inserted to limit the current

sunk from the microcontroller I/Os. If IRmax is the

maximum target reverse current through µC I/Os,

series resistor is:

R = V-----I--O-I--R--s--m--–----a-V---x-C-----C---

9/18

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