STU13NM60N(2020) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STU13NM60N
(Rev.:2020)

N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages

STMicroelectronics 

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N

Electrical characteristics (curves)

Figure 13. Normalized gate threshold voltage vs

temperature

VGS(th)

AM03306v1

1.1

ID=250µA

1.0

0.9

08.08

0.07.07

-50

0

TJ

Figure 14. Normalized on resistance vs temperature

RDS(on)

(norm)

2.1

IDD=55.5.5AA

AM03307v1

11..77

1.5

11..33

1.1

00..99

0.7

00..55

-50 -25 0

25 50 75 100 TJ(°C)

Figure 15. Source-drain diode forward characteristics

VSD

(V)

1.2

TJ=-50°C

AM09290v1

TJ=25°C

1.0

0.8

TJ=150°C

0.6

0.4

0

2

4

6

8 10 ISD(A)

DS6112 - Rev 6

page 7/20

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