FDZ191P View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDZ191P Datasheet PDF : 7 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250μA, VGS = 0V
-20
V
ID = -250μA, referenced to 25°C
-12
mV/°C
VDS = -16V, VGS = 0V
VGS = ±8V, VDS = 0V
-1
μA
±100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
ID(on)
gFS
On to State Drain Current
Forward Transconductance
VGS = VDS, ID = -250μA
-0.4 -0.6 -1.5
V
ID = -250μA, referenced to 25°C
2
mV/°C
VGS = -4.5V, ID = -1A
67
85
VGS = -2.5V, ID = -1A
VGS = -1.5V, ID = -1A
85
123
mΩ
140 200
VGS = -4.5V, ID = -1A TJ = 125°C
87
123
VGS = -4.5V, VDS = -5V
-10
A
VDS = -5V, ID = -1A
7
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -10V, VGS = 0V,
f = 1MHz
f = 1MHz
800
pF
155
pF
90
pF
9
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = -10V, ID = -1A
VGS = -4.5V, RGEN = 6Ω
VGS = 0V to 10V VDD = -10V
ID = -1A
11
20
ns
10
20
ns
50
80
ns
30
48
ns
9
13
nC
1
nC
2
nC
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Source Diode Forward Current
-1.1
A
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = -1.1A (Note 2)
-0.7 -1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = -1A, di/dt = 100A/μs
21
ns
5
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
side of the solder ball, RθJB is defined for reference. For RθJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB
are guaranteed by design while RθJA is determined by the user's board design.
a. 83°C/W when mounted on
a 1 in2 pad of 2 oz copper,1.5”
X 1.5” X 0.062” thick PCB
b. 140°C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
FDZ191P Rev.F1 (W)
2
www.fairchildsemi.com
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