PHP160NQ08T View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PHP160NQ08T Datasheet PDF : 13 Pages
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NXP Semiconductors
PHP160NQ08T
N-channel TrenchMOS standard level FET
240
Tj = 25 °C 10
ID
VGS (V) =
(A)
160
03ap68
6
5.5
75
ID
(A)
50
03ap70
80
5
4.5
0
0
1
2
3
4
VDS (V)
25
0
0
Tj = 175 °C
25 °C
2
4
6
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10−1
ID
(A)
10−2
03aa35
min typ max
5
VGS(th)
(V)
4
max
03aa32
10−3
3
typ
10−4
2
min
10−5
1
10−6
0
2
4
6
VGS (V)
0
−60
0
60
120
180
Tj (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PHP160NQ08T_2
Product data sheet
Rev. 02 — 10 March 2009
© NXP B.V. 2009. All rights reserved.
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