BAS21AW View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BAS21AW Datasheet PDF : 11 Pages
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NXP Semiconductors
BAS21W series
High-voltage switching diodes
4. Marking
Table 5. Marking codes
Type number
BAS21W
BAS21AW
BAS21SW
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
X4*
X6*
X5*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VR
reverse voltage
-
IF
forward current
[1] -
[2] -
IFRM
repetitive peak forward
-
current
IFSM
non-repetitive peak forward square wave
[3]
current
tp = 1 µs
-
tp = 100 µs
-
tp = 10 ms
-
Per device
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
[4] -
-
−55
−65
Max Unit
250
V
225
mA
125
mA
625
mA
9
A
3
A
1.7
A
200
mW
150
°C
+150 °C
+150 °C
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj = 25 °C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAS21W_SER_1
Product data sheet
Rev. 01 — 9 October 2009
© NXP B.V. 2009. All rights reserved.
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