STM32F405xx, STM32F407xx
Electrical characteristics
Symbol
Table 39. Flash memory programming (continued)
Parameter
Conditions
Min(1) Typ Max(1) Unit
Program/erase parallelism
(PSIZE) = x 8
-
1200 2400
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
700 1400 ms
Program/erase parallelism
(PSIZE) = x 32
-
550 1100
Program/erase parallelism
(PSIZE) = x 8
-
2
4
tERASE128KB
Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
1.3 2.6
s
Program/erase parallelism
(PSIZE) = x 32
-
1
2
Program/erase parallelism
(PSIZE) = x 8
-
16 32
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 16
-
11
22
s
Program/erase parallelism
(PSIZE) = x 32
-
8
16
32-bit program operation 2.7
-
3.6 V
Vprog
Programming voltage
16-bit program operation 2.1
-
3.6 V
8-bit program operation
1.8
-
3.6 V
1. Based on characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
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