STM32F405xx, STM32F407xx
Electrical characteristics
Table 25. Typical and maximum current consumptions in VBAT mode
Typ
Max(1)
Symbol Parameter
Conditions
Backup
IDD_VBA domain
T supply
current
Backup SRAM ON, low-speed
oscillator and RTC ON
Backup SRAM OFF, low-speed
oscillator and RTC ON
Backup SRAM ON, RTC OFF
Backup SRAM OFF, RTC OFF
1. Based on characterization, not tested in production.
TA = 25 °C
VBAT
=
1.8 V
VBAT=
2.4 V
VBAT
=
3.3 V
1.29 1.42 1.68
0.62 0.73 0.96
0.79 0.81 0.86
0.10 0.10 0.10
TA =
85 °C
TA =
105 °C
VBAT = 3.6 V
6
11
3
5
5
10
2
4
Unit
µA
Figure 28. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF)
3.5
3
2.5
2
1.5
1
0.5
0
0
1.65V
1.8V
2V
2.4V
2.7V
3V
3.3V
3.6V
10
20
30
40
50
60
70
80
90
100
Temperature in (°C)
MS19990V1
DocID022152 Rev 4
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