1SS368 View Datasheet(PDF) - Semtech Electronics LTD.
Part Name
Description
Manufacturer
1SS368 Datasheet PDF : 3 Pages
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1SS368
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Maximum (Peak) Reverse Voltage
VRM
85
V
Reverse Voltage
VR
80
V
Average Forward Current
IO
100
mA
Maximum (Peak) Forward Current
IFM
200
mA
Surge Current (10 ms)
Power Dissipation
IFSM
1
A
Ptot
150 1)
mW
Junction Temperature
Tj
125
OC
Storage Temperature Range
Tstg
- 55 to + 125
OC
1) Mounted on a glass epoxy circuit board of 20 X 20 mm, pad dimension of 4 X 4 mm
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 30 V
at VR = 80 V
Total Capacitance
at f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω
Symbol
Max.
Unit
VF
1.2
V
IR
0.1
µA
0.5
CT
3
pF
trr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
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