MBM29LV160BE-70PBT View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29LV160BE-70PBT

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT

Fujitsu 

MBM29LV160TE/BE-70/90/12

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Min.

Limits

Typ.

Max.

Sector Erase Time

—

1

10

Byte Programming Time

Word Programming Time

—

8

300

—

16

360

Chip Programming Time

—

16.8

50

Erase/Program Cycle

100,000

—

—

Unit

Comments

s

Excludes programming time

prior to erasure

µs

Excludes system-level

overhead

s

cycle

Excludes system-level

overhead

—

s PIN CAPACITANCE

Parameter

Symbol

Input Capacitance

Output Capacitance

Control Pin Capacitance

CIN

COUT

CIN2

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ.

Max.

Unit

6

7.5

pF

8

10

pF

7.5

9

pF

33

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