2N3767 View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
Manufacturer
2N3767 Datasheet PDF : 2 Pages
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SILICON NPN TRANSISTOR
2N3767
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
ICEO
IEBO
Collector-Emitter
Breakdown Voltage
Collector-Emitter Cut off
Current
Emitter-Base Cut-Off Current
IC = 100mA
VCE = 80V
VEB = 6.0V
IB = 0
IC = 0
ICEX
Collector-Emitter Cut-Off
Current
VCE = 100V
VCE = 70V
VBE = -1.5V
VBE = -1.5V
TA = 150°C
ICBO
VBE(1)
Collector-Base Cut-Off Current
Base-Emitter Voltage
VCB = 100V
VCE = 10V
IE = 0
IC = 1.0A
IC = 50mA
VCE = 5V
hFE(1)
DC Current Gain
IC = 500mA
VCE = 5V
TA = -55°C
IC = 1.0A
VCE = 10V
VCE(sat)(1)
VBE(sat)(1)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IC = 500mA
IC = 1.0A
IC = 1.0A
IB = 50mA
IB = 100mA
IB = 100mA
DYNAMIC CHARACTERISTICS
|hfe|
Magnitude of Small-Signal
Short-Circuit Current Gain
Cobo
ton
toff
Output Capacitance
Turn On Time
Turn Off Time
IC = 500mA
f = 10MHz
VCB = 10V
f = 1.0MHz
VCC = 30V
IB1 = 50mA
VCE = 10V
IE = 0
IC = 500mA
IB2 = - IB1
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
Min. Typ. Max. Unit
80
V
500
500
µA
10
1.0 mA
10
µA
1.5
V
30
40
160
13
20
1.0
2.5
V
1.5
1.0
8.0
50
pF
0.25
µs
2.5
6.35 (0.250)
8.64 (0.340)
12
TO66 (TO-213AA) METAL PACKAGE
Underside View
PIN 1 - Base PIN 2 - Emitter Case - Collector
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9157
Website: http://www.semelab-tt.com
Issue 1
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