-Conductor
, tfnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
,ic A
\J .O./\
5 AMP POWER
SWITCHING TRANSISTORS
2N399G-2N3999
Absolute Maximum Ratings
Collector-Base Voltage
100V
Collector-Emitter Voltage
80V
Emitter-Base Voltage
8V
D.C. Collector Current
5A
Power Dissipation
at 25" C Ambient
Temperature
.. 2W
Power Dissipation
at 100° CCase
Temperature
30W
Operating and Storage
Temperature Range —65 to 200°C
TELEPHONE:. (201) 376-2922
(212) 227-6005
TELEX: 13-8720
D Operating Voltages: Vcio to 80 min.
D Fast Switching: T0» 300 nsec.
D Fast Switching: Torr 2000 nsec.
D Beta Guaranteed at 3 current levels.
SILICON PLANAR NPN
POWER TRANSISTORS
Electrical Specifications (at 25°C unless noted)t
Test
D.C. Current gain
D.C, Current gain {Note 1)
D.C. Current gain (Note 1)
D.C. Current gain, -55°C (Note 1)
Collector saturation voltage (Note 1)
Collector saturation voltage (Note 1)
Base saturation voltage (Note 1)
Base saturation voltage (Note 1)
Collector-emitter breakdown voltage
(Note 1)
Emitter-base cutoff current
Emitter-base cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current, 150°C
Collector capacitance
A.C. Current gain (high frequency)
.....
. Turn-on time '
Switching speeds Tum.off time
Symbol
hf[
h,c
h,E
hf[
Vcr (sat)
Vcc (sat)
VBE (sat)
V8E (sat)
BVcto
lf.HO
llBO
Ices
Icto
lets
Cob
h,.
U
U
2N3996
2N3998
Min. Max.
2N3997
2 N 3999
Min. Max.
30
—
40 120
_
15
10 —
— 0.25
—
2
0.6 i.2
— 1.6
80 —
60
—
80 240
20 —
20 —
— 0.25
—
2
0.6 1.2
— 1.6
80
—
— 0.5
— 10
—
5
— 10
—
50
— 150
A—
0.3
1.5
— 0.5
— 10
—
5
— 10
— 50
— 150
4—
"^
0.3
2
Units
—
__
—
_
V
V
V
V
V
/'A
/'A
/•A
M
/<A
Pf
—
/i Sec
/iSec
Test Conditions
lc=50 mA, Vct=2V
lc=lA, VCE=2V
lc=5A, V«=5V
IC=1A, VC[=2V
lc=lA, la=100 mA
lc=5A, ls=500 mA
IC=1A, IB=100 mA
IC=5A. l,=500 mA
lc=50 mA, l,=0
V,t = 5V, l,:=0
V,t=8V, lc=0
VC[=90V, R,E=0
VC£=60V, l,=0
Vct=90, R,E-0
Vc.-lOV, IE=0. f=l mHz
lc=lA, VCE=5V, f=10 mHz
IC=1A
lb,=100mA, lu= -100 mA
TO-lll
TO-59
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*Ll ELEMENTS IfjOlAIEO ffiOM CALE
Quality Semi-Conductors