2N6232 View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

Manufacturer

2N6232

SILICON NPN TRANSISTOR

Microsemi Corporation 

2N6232

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (2)

DC Current Gain

IC = 5.0 Adc, VCE = 2.0 Vdc

Collector-Emitter Saturation Voltage

IC = 5 Adc, IB = .5 Adc

Base-Emitter Saturation Voltage

IC = 10 Adc, IB = 1.0 Adc

DYNAMIC CHARACTERISTICS

Output Capacitance

VCB = 10 Vdc, IE = 0, f = 1.0 MHz

SWITCHING CHARACTERISTICS

IC = 5.0 Adc, IB1= Ib2 = 0.5 A

Duty Cycle – 2.0%

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(ON)

Cobo

ton

toff

Min. Max.

Unit

25

100

0.7

Vdc

1.8

Vdc

150

PF

250

ns

1200

ns

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

10604

Page 2 of 2

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