2N6134 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2N6134

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

2N61322N6133 2N6134

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

Collector-emitter

VcEO(SUS) sustaining voltage

2N6132

2N6133 lc=-0.1A;la=0

2N6134

VcEsal

Collector-emitter

saturation voltage

2N6132

2N6133 IC=-7A;IB=-1.2A

2N6134

VBE

Base-emitter on voltage

lc=-2.5A ; VCE=-4V

Icev

Collector

cut-off current

2N6132

2N6133

2N6134

VCE— 40V;VBE=1.5V

Tc=150

VCE=-60V;VBE=1.5V

Tc=150

VCE=-80V;VBe=1.5V

Tc=150

IEBO

Emitter cut-off current

VEB=-5V; lc=0

hpE

DC current gain

lc=-2.5A ; VCE=-4V

fr

Transition frequency

IC=-0.2A ; VCE=-4V

MIN TYP. MAX UNIT

-40

-60

V

-80

-1.4

V

-1.8

-1.4

V

-0.5

-3.0

mA

-0.5

-3.0

-0.5

-3.0

mA

-1.0

mA

20

100

2.5

MHz

a-ftfit tr

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