SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6302
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A
VBEsat
Base-emitter saturation voltage
IC=10A; IB=1A
VBE
Base-emitter on voltage
ICEV
Collector cut-off current
ICBO
Collector cut-off current
IC=8A ; VCE=4V
VCE=140V; VBE=-1.5V
TC=150
VCB=140V; IE=0
ICEO
IEBO
hFE-1
hFE -2
fT
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
VCE=70V; IB=0
VEB=7V; IC=0
IC=8A ; VCE=4V
IC=16A ; VCE=4V
IC=1A ; VCE=10V;f=1MHz
MIN TYP. MAX UNIT
140
V
1.0
V
2.0
V
1.8
V
1.5
V
1.0
5.0
mA
1.0
mA
2.0
mA
1.0
mA
15
60
4
0.2
MHz
2