2N7002BKMB View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002BKMB Datasheet PDF : 15 Pages
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2N7002BKMB
60 V, single N-channel Trench MOSFET
Rev. 2 — 13 June 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
Logic-level compatible
Ultra thin package profile with 0.37
mm height
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 450 mA; Tj = 25 °C
resistance
Min Typ Max Unit
-
-
60 V
-20 -
20 V
-
-
450 mA
-
1
1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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