2N7002BKT View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002BKT Datasheet PDF : 16 Pages
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2N7002BKT
60 V, 290 mA N-channel Trench MOSFET
Rev. 1 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
VGS
ID
RDSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C;
VGS = 10 V;
ID = 500 mA
-
-
60
V
-
-
±20 V
[1] -
-
290 mA
-
1
1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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