2SA1942 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SA1942 Datasheet PDF : 2 Pages
| |||
Silicon PNP Power Transistor
2SA1942
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
-160
V
VcE(sat) Collector-Emitter Saturation Voltage lc=-8.0A; IB=-0.8A
VsE(on)
Base-Emitter On Voltage
lc= -6A; VCE= -5V
ICBO
Collector Cutoff Current
VCB=-160V;IE=0
-2.5
V
-1.5
V
-5
uA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-5
uA
hpE-1
DC Current Gain
lc=-1A;VCE=-5V
55
160
hFE-2
DC Current Gain
lc= -6A;VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
fr
Current-Gain—Bandwidth Product
lc=-1A;VCE=-5V
320
PF
30
MHz
• hpE-1 Classifications
R
O
55-110
80-160
Share Link: 