SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1339
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA; IE=0
VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-6mA
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-2A ; VCE=-3V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-120
V
-120
V
-1.5
V
-100
µA
-3.0
mA
2000
20000
12
MHz
70
pF
2