SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VCB=200V;IE=0
VEB=7V; IC=0
IC=1A ; VCE=5V
IC=0.5A ; VCE=5V
Product Specification
2SC3231
MIN TYP. MAX UNIT
150
V
200
V
7
V
1.0
V
100
µA
100
µA
30
150
8
MHz
2