SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3272
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5m A
V(BR)CBO Collector-base breakdown voltage
IC=10µA;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10µA; IC=0
hFE
DC current gain
IC=10mA ; VCE=10V
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
fT
Transition frequency
IC=10mA ; VCB=30V
MIN TYP. MAX UNIT
2.0
V
300
V
300
V
5
V
39
180
0.5
µA
0.5
µA
3
pF
50
MHz
2