2SK3367-Z-E2 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

2SK3367-Z-E2

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

2SK3367

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Drain to Source On-state Resistance

RDS(on)1 VGS = 10 V, ID = 18 A

RDS(on)2 VGS = 4.5 V, ID = 18 A

RDS(on)3 VGS = 4.0 V, ID = 18 A

Gate to Source Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 18 A

Drain Leakage Current

IDSS

VDS = 30 V, VGS = 0 V

Gate to Source Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Input Capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-on Delay Time

td(on)

ID = 18 A, VGS(on) = 10 V, VDD = 15 V,

Rise Time

tr

RG = 10 Ω

Turn-off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

ID = 36 A, VDD = 24 V, VGS = 10 V

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Body Diode forward Voltage

VF(S-D) IF = 36 A, VGS = 0 V

Reverse Recovery Time

trr

IF = 36 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 100 A/µs

MIN. TYP. MAX. UNIT

7.3 9.0 mΩ

9.0 12.0 mΩ

9.7 14.0 mΩ

1.5 2.0 2.5 V

13 26

S

10 µA

±10 µA

2800

pF

880

pF

400

pF

75

ns

1130

ns

165

ns

210

ns

49

nC

10

nC

14

nC

0.95

V

45

ns

50

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

RG = 10 Ω

VGS

0

t

t = 1µ s

Duty Cycle ≤ 1 %

RL

VDD

VGS

VGS

Wave Form

0 10 %

VGS (on) 90 %

ID

90 %

ID

ID

Wave Form

0 10 %

90 %

10 %

td (on)

tr

td (off)

tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D14257EJ1V0DS00

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