2SK3517-01 View Datasheet(PDF) - Fuji Electric

Part Name

Description

Manufacturer

2SK3517-01

N-CHANNEL SILICON POWER MOSFET

Fuji Electric 

2SK3517-01

Characteristics

Allowable Power Dissipation

PD=f(Tc)

100

80

60

40

20

0

0

25

50

75

100

125

150

Tc [°C]

Typical Transfer Characteristic

ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C

10

FUJI POWER MOSFET

Typical Output Characteristics

ID=f(VDS):80µs Pulse test,Tch=25°C

10

20V

9

10V

7.0V

8

6.5V

7

6

5

6.0V

4

3

2

VGS=5.5V

1

0

0 2 4 6 8 10 12 14 16 18 20 22

VDS [V]

Typical Transconductance

gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C

100

1

10

0.1

1

0.01

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

VGS[V]

0.1

0.01

0.1

1

10

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80µs Pulse test, Tch=25°C

4

VGS=5.5V

3

6.0V

2

6.5V

7.0V

10V

20V

1

0

0

2

4

6

8

10

ID [A]

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=3A,VGS=10V

4.0

3.5

3.0

2.5

max.

2.0

typ.

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125 150

Tch [°C]

2

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