M68AF127BL55N6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M68AF127BL55N6

1Mbit (128K x8), 5V Asynchronous SRAM

STMicroelectronics 

M68AF127B

Figure 14. E1 Controlled, Low VCC Data Retention AC Waveforms

5.5V

VCC

4.5V

VDR > 2.0V

E1

DATA RETENTION MODE

tCDR

E1 ≥ VDR – 0.2V

Figure 15. E2 Controlled, Low VCC Data Retention AC Waveforms

5.5V

VCC

4.5V

VDR > 2.0V

E2

DATA RETENTION MODE

tCDR

E2 ≤ 0.2V

tR

AI07204

tR

AI07205B

Table 9. Low VCC Data Retention Characteristics

Symbol

Parameter

Test Condition

Min

ICCDR (1) Supply Current (Data Retention)

VCC = 2.0V, E1 ≥ VCC –0.2V or

E2 ≤0.2V, f = 0

tCDR (1,2) Chip Deselected to Data Retention Time

0

tR (2) Operation Recovery Time

tAVAV

VDR (1) Supply Voltage (Data Retention)

E1 ≥ VCC –0.2V or E2 ≤0.2V, f = 0 2.0

Note: 1. All other Inputs at VIH ≥ VCC –0.2V or VIL ≤0.2V.

2. Tested initially and after any design or process that may affect these parameters. tAVAV is Read cycle time.

3. No input may exceed VCC +0.2V.

Max

4.5

Unit

µA

ns

ns

V

16/23

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