ACST4358(2014) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ACST4358 Datasheet PDF : 14 Pages
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Characteristics
ACST4
Figure 4. On-state rms current versus ambient
temperature (free air convection, full cycle)
Figure 5. Relative variation of thermal
impedance versus pulse duration
IT(RMS)(A)
2.0
TO-220FPAB
1.5
DPAK with copper
surface = 0.5 cm2
1.0
α=180°
1.0E+00 K = [Zth / Rth]
DPAK
Zth(j-c)
1.0E-01
TO-220FPAB
Zth(j-a)
0.5
0.0
0
Ta(°C)
Tp(s)
1.0E-02
25
50
75
100
125
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6. Relative variation of gate trigger Figure 7. Relative variation of holding current
current (IGT) and voltage (VGT) versus junction (IH) and latching current (IL) versus junction
temperature
temperature
3.0 IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
2.5
IGT Q3
(typical values)
IH, IL[Tj] / IH, IL[Tj = 25 °C]
2.5
2.0
(typical values)
2.0
IGT Q1-Q2
1.5
1.5
1.0
1.0 VGT Q1-Q2-Q3
IL
0.5
0.5
IH
Tj(°C)
0.0
0.0
Tj(°C)
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Figure 8. Surge peak on-state current
versus number of cycles
Figure 9. Non repetitive surge peak on-state
current and corresponding value of I2t versus
sinusoidal pulse width
ITSM(A)
35
30
25
20
15
10
Repetitive
TC=102°C
5
0
1
Non repetitive
Tj initial=25 °C
t=20ms
One cycle
1000 ITSM(A), I²t (A²s)
dl /dt limitation: 100 A / µs
100
Tj initial = 25 °C
ITSM
10
I²t
Number of cycles
1
tp (ms)
10
100
1000
0.01
0.10
1.00
10.00
4/14
DocID8766 Rev 6
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