DMEG250 View Datasheet(PDF) - GHz Technology
Part Name
Description
Manufacturer
DMEG250 Datasheet PDF : 3 Pages
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DMEG 250
250 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The DMEG 250 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
875 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 Volts
4.0 Volts
30 Amps
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 5%
F = 1090 MHz
250
6.2
35
Watts
60 Watts
dB
%
5:1
BVebo
Emitter to Base Breakdown
Ie = 20 mA
4.0
BVces
Collector to Emitter Breakdown Ic = 25 mA
55
Cob
Capacitance Collector to Base
Vcb = 50 Volts
hFE
DC - Current Gain
θjc2
Thermal Resistance
Ic = 1 mA, Vce = 5 V
10
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue A, July 1997
Volts
Volts
pF
0.2
oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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