AT88SC0808/1616/3216/6416CRF, AT88RF04C
Table 103 shows the consequences of a tearing attack occurring at each step during an anti-tearing write. The
EEPROM contents at the address being written will either remain unchanged, or will be written with the new data. The
EEPROM is not corrupted by power interruption during an anti-tearing write operation.
Table 103. Consequences of a Tearing Event during an Anti-Tearing Write
Step
Description
Result if Power is interrupted Mid-Step
1 Write Buffer Memory
Original EEPROM Contents are Unchanged
2 Write Anti-Tearing Flag
Original EEPROM Contents are Unchanged
3 Write Final Memory
Anti-Tearing Write Completes on POR
4 Clear Anti-Tearing Flag
Anti-Tearing Write Completes on POR
L.3.
Performance Impact of Anti-Tearing
Anti-tearing impacts the CryptoRF write transaction time in two ways. First, the maximum length of a write command is
limited to 8 bytes when anti-tearing is active. Second, the response time of a write command is increased by
approximately four times due to additional EEPROM memory writes which occur when anti-tearing is active.
If anti-tearing is used to write 8 bytes of data, the net result is an increase in the transaction time of only 5 milliseconds.
When large amounts of data are written, the increase in transaction time is significant. Writing the entire 128 byte User
Zone on AT88RF04C takes 155 milliseconds with anti-tearing, but only 47 milliseconds without anti-tearing. Writing the
entire 256 byte User Zone on AT88SC3216CRF takes 292 milliseconds with anti-tearing, but only 54 milliseconds
without anti-tearing.
Table 104. CryptoRF Family Write Characteristics with Anti-Tearing
CryptoRF
Part Number
Write Characteristics
Standard Write Anti-Tearing Write
AT88RF04C
1 to 16 bytes
1 to 8 bytes
AT88SC0808CRF
1 to 16 bytes
1 to 8 bytes
AT88SC1616CRF
1 to 16 bytes
1 to 8 bytes
AT88SC3216CRF
1 to 32 bytes
1 to 8 bytes
AT88SC6416CRF
1 to 32 bytes
1 to 8 bytes
5276C–RFID–3/09
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