BAS286-GS18 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BAS286-GS18 Datasheet PDF : 4 Pages
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www.vishay.com
BAS286
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
500
450 VR = 50 V
400
350
300
250
200
150
100 RthJA = 540 K/W
50
PR - Limit
at 100 % VR
PR - Limit
at 80 % VR
0
25
50
75 100 125 150
15827
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
10
9
f = 1 MHz
8
7
6
5
4
3
2
1
0
0.1
1
10
100
15830
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
10000
1000
VR = V RRM
100
10
1
25
50
75 100 125 150
15828
Tj - Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
1000
100
Tj = 125 °C
Tj = 25 °C
10
1
0.1
0
0.5
1.0
1.5
15829
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Rev. 2.0, 02-Jun-17
2
Document Number: 85502
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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