BAT54WS-V-GS08(2006) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
| BAT54WS-V-GS08 Datasheet PDF : 0 Pages | |||
BAT54WS-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol Min Typ.
Max
Unit
Reverse breakdown voltage
Leakage current2)
Forward voltage2)
Diode capacitance
Reverse recovery time
tested with 100 µA pulses
VR = 25 V
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 1 V, f = 1 MHz
IF = IR = 10 mA; IR = 1 mA; RL = 100 Ω
V(BR)
30
IR
VF
VF
VF
VF
VF
CD
trr
V
2
µA
240
mV
320
mV
400
mV
500
mV
800
mV
10
pF
5
ns
2) Pulse test: tp < 300 µs, θ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
Tj = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
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0.2 0.4 0.6 0.8 1 1.2 1.4
VF - Forward Current (V)
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
1000
100
10
1
0.1
Tj = 125 °C
100 °C
75 °C
50 °C
25 C
0.01
0
5
10 15 20 25 30
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VR - Reverse Voltage (V)
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
14
12
10
8
6
4
2
0
0
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4 8 12 16 20 24 28
VR - Reverse Voltage (V)
Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR
www.vishay.com
2
Document Number 85667
Rev. 1.5, 14-Nov-06
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