BUL39D(2000) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BUL39D Datasheet PDF : 6 Pages
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BUL39D
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.78
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = rated VCES
VCE = rated VCES
Tj = 125 oC
IEBO
VCEO(sus)
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Sustaining Voltage
(IB = 0)
Collector-Emitter
Saturation Voltage
VEB = 9 V
IC = 100 mA
IC = 1 A
IC = 2.5 A
L = 25 mH
IB = 0.2 A
IB = 0.5 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2.5 A
IB = 0.2 A
IB = 0.5 A
hFE∗ DC Current Gain
IC = 5 A
IC = 10 mA
VCE = 10 V
VCE = 5 V
VCEW
ts
tf
Maximum Collector
Emitter Voltage
Without Snubber
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 6 A
VBB = -2.5 V
tp = 10 µs
IC = 2.5 A
VBE(off) = -5 V
VCL = 300 V
RBB = 0 Ω
L = 50µH
IBon = 0.5 A
RBB = 0 Ω
L = 1 mH
Vf
Diode Forward Voltage IC = 2 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
450
0.13
4
10
450
0.7
50
Max.
100
500
100
0.5
1.1
1.1
1.3
1.5
100
1.5
Unit
µA
µA
µA
V
V
V
V
V
V
µs
ns
V
2/6
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