M48T212YMH View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M48T212YMH

5.0V or 3.3V TIMEKEEPER® Supervisor

STMicroelectronics 

M48T212Y, M48T212V

Table 14. DC Characteristics

M48T212Y

M48T212V

Sym

Parameter

Test Condition(1)

–70

–85

Unit

Min Typ Max Min Typ Max

ILI(2) Input Leakage Current

0V ≤ VIN ≤ VCC

±1

±1 µA

ILO(3) Output Leakage Current 0V ≤ VOUT ≤ VCC

±1

±1 µA

ICC Supply Current

Outputs open

8

15

4

10 mA

ICC1

Supply Current (Standby)

TTL

E = VIH

5

3 mA

ICC2

Supply Current (Standby)

CMOS

E = VCC –0.2

3

2 mA

Battery Current OSC ON

575 800

575 800 nA

Battery Current OSC

IBAT ON(4)

VCC = 0V

950 1250

950 1250 nA

Battery Current OSC

OFF

100

100 nA

VIL Input Low Voltage

–0.3

0.8 –0.3

0.8 V

VIH Input High Voltage

2.2

VCC +

0.3

2.0

VCC +

0.3

V

Output Low Voltage

VOL Output Low Voltage

(open drain) (5)

IOL = 2.1mA

IOL = 10mA

0.4

0.4 V

0.4

0.4 V

VOH Output High Voltage

IOH = –1.0mA

2.4

2.4

V

VOHB(6) VOH Battery Back-up

IOUT2 = –1.0µA

2.0

3.6 2.0

3.6 V

IOUT1(7) VOUT Current (Active)

VOUT1 > VCC –0.3

100

70 mA

IOUT2

VOUT Current (Battery

Back-up)

VOUT2 > VBAT –0.3

100

100 µA

VPFD

Power-fail Deselect

Voltage

4.2 4.35 4.5

2.7

2.9

3.0 V

VSO

Battery Back-up

Switchover Voltage

3.0

VPFD –

100mV

V

VBAT Battery Voltage

3.0

3.0

V

Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).

2. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ resistor.

3. Outputs deselected.

4. IBAT (OSC ON) = Industrial Temperature Range - Grade 6 device.

5. For IRQ/FT & RST pins (Open Drain).

6. Conditioned outputs (E1CON - E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage cur-

rents will reduce battery life.

7. External SRAM must match TIMEKEEPER® SUPERVISOR chip VCC specification.

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