CLP270M
A new technology available today is IMS - an
Insulated Metallic Substrate. This offers greatly
enhanced thermal characteristics for surface
mount components. IMS is a substrate consisting
of three different layers, (I) the base material which
is available as an aluminium or a copper plate, (II)
a thermal conductive dielectrical layer and (III) a
copper foil, which can be etched as a circuit layer.
Using this material a thermal resistance of 8°C/W
with 40 cm2 of board floating in air is achievable
(see fig. 39). If even higher power is to be
Fig 39 : Mounting on metal backed board
dissipated an external heatsink could be applied
which leads to an Rth(j-a) of 3.5°C/W (see Fig. 40),
assuming that Rth (heatsink-air) is equal to Rth
(junction-heatsink). This is commonly applied in
practice, leading to reasonable heatsink
dimensions. Often power devices are defined by
considering the maximum junction temperature of
the device. In practice , however, this is far from
being exploited. A summary of various power
management capabilities is made in table 1 based
on a reasonable delta T of 70°C junction to air.
Fig 40 : Mounting on metal backed board with an
external heatsink applied
Copper foil
Insulation
Aluminium
Copper foil
FR4 board
Aluminium
heatsink
The PowerSO-10 concept also represents an
attractive alternative to C.O.B. techniques.
PowerSO-10 offers devices fully tested at low and
high temperature. Mounting is simple - only
conventional SMT is required - enabling the users
to get rid of bond wire problems and the problem to
control the high temperature soft soldering as well.
An optimized thermal management is guaranteed
through PowerSO-10 as the power chips must in
any case be mounted on heat spreaders before
being mounted onto the substrate.
TABLE 7 : THERMAL IMPEDANCE VERSUS SUBSTRATE
PowerSo-10 package mounted on
1.FR4 using the recommended pad-layout
2.FR4 with heatsink on board (6cm2)
3.FR4 with copper-filled through holes and external heatsink applied
4. IMS floating in air (40 cm2)
5. IMS with external heatsink applied
(*) Based on a delta T of 70 °C junction to air.
Rth (j-a)
50 °C/W
35 °C/W
12 °C/W
8 °C/W
3.5 °C/W
P Diss (*)
1.5 W
2.0 W
5.8 W
8.8 W
20 W
22/24