M29F032D70N1T View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M29F032D70N1T

32 Mbit (4Mb x8, Uniform Block) 5V Supply Flash Memory

STMicroelectronics 

Table 19. CFI Query System Interface Information

Address

Data

Description

VCC Logic Supply Minimum Program/Erase voltage

1Bh

45h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

VCC Logic Supply Maximum Program/Erase voltage

1Ch

55h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

1Dh

00h

VPP [Programming] Supply Minimum Program/Erase voltage

00h not supported

1Eh

00h

VPP [Programming] Supply Maximum Program/Erase voltage

00h not supported

1Fh

04h

Typical timeout per single byte program = 2n µs

20h

00h

Typical timeout for minimum size write buffer program = 2n µs

21h

0Ah

Typical timeout per individual block erase = 2n ms

22h

00h

Typical timeout for full chip erase = 2n ms

23h

04h

Maximum timeout for byte program = 2n times typical

24h

00h

Maximum timeout for write buffer program = 2n times typical

25h

03h

Maximum timeout per individual block erase = 2n times typical

26h

00h

Maximum timeout for chip erase = 2n times typical

Note: 1. Not supported in the CFI

M29F032D

Value

4.5V

5.5V

NA

NA

16µs

NA

1s

see note (1)

256µs

NA

8s

see note (1)

27/36

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